Webb15 juli 2015 · The relative density of the obtained compact reached a high value of 99.25%, and the resistivity reached the minimum of 3.17 × 10 −3 Ω cm. With a sintering … WebbDiVA portal

Electrical resistivity of gold thin film as a function of film thickness

WebbWe report on the high-performance and high-stability of thin-film transistors (TFTs) using solution-processed Zr–In–Zn–O (ZIZO) as an active layer. The effects of adding Zr to … WebbThe temperature coefficient of resistivity (TCR) was found to have a negative value for the thinnest films, approaching zero for D = 310-350 {angstrom} and was positive for … glass dining table with shelf underneath

Gate-to-source voltage response in high-sensitivity amorphous InGaZnO4 …

WebbSheet resistance (also known as surface resistance or surface resistivity) is a common electrical property used to characterise thin films of conducting and semiconducting … WebbFlexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO4 (IGZO) channel are fabricated at room temperature. Such TFTs show a low operation voltage of 1.0 V due to the large specific gate capacitance of 3.8 μF cm−2 related to electric-double-layer formation. The threshold voltag Webb10 sep. 2010 · Abstract. The present status and recent research results on amorphous oxide semiconductors (AOSs) and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In–Ga–Zn–O (a-IGZO) are expected to be the channel material of TFTs in next-generation flat-panel displays because a-IGZO TFTs satisfy almost all … glass dining table with sides